Please use this identifier to cite or link to this item:
Title: Variability study of nanowire: a compact model application
Authors: Machavolu Kamakshi Srikanth
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2011
Abstract: In this work, figures of merits (FOM), such as Ion, I0fr, Gm, Gd, are studied using ananowire compact model which is non-binnable with minimal physically meaningful parameters. Statistical theories are applied to the mathematical compact model for describing major transistor FOM's and their bias/geometry dependencies. Further, the sensitivities of these FOMs to the geometry and biasvariations are computed and their impacts on variances of the target parameters are computed using certain statistical models. Finally, the computed statistics are verified by performing Monte Carlo circuit simulations using a Nanowire Compact Model. This study provides a useful tool and a guideline in analysing circuit and device FOM's of MOSFET which would be useful for probabilistic CMOS design paradigms that exploit randomness in futuristic devices by taking advantage of probabilistic behaviours into chip designs.
Description: 57 p.
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
5.91 MBAdobe PDFView/Open

Page view(s) 50

Updated on Jun 18, 2024


Updated on Jun 18, 2024

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.