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|Title:||Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology||Authors:||See, Kwang Seng||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2009||Source:||See, K. S. (2009). Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||The focus of this dissertation is the investigation of MOS transistors with very small dimensions in terms of very short gate length (Lg), very narrow gate width (Wg) as well as very small source-drain diffusion length (Lov). The candidate observed a relatively new phenomenon of narrow width effect, which was called the anomalous narrow width effect (ANWE). For example, the threshold voltage (VT) increased with the decrease of Wg for big Wg (~ 0.6 to 1.2 µm) but VT decreased with the decrease of Wg for small Wg (< 0.6 µm); this was only observed in "very short" (e.g. 0.13 µm) NMOS transistors having a phosphorus deep source-drain implant in addition to the usual arsenic implant. ANWE is a relatively weak effect for NMOS transistors but it is a strong effect in PMOS transistors with very short Lg.||Description:||193 p.||URI:||https://hdl.handle.net/10356/46791||DOI:||10.32657/10356/46791||Rights:||Nanyang Technological University||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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