dc.contributor.authorSee, Kwang Sengen_US
dc.date.accessioned2011-12-23T09:55:44Z
dc.date.accessioned2017-07-23T08:33:42Z
dc.date.available2011-12-23T09:55:44Z
dc.date.available2017-07-23T08:33:42Z
dc.date.copyright2009
dc.date.issued2009
dc.identifier.citationSee, K. S. (2009). Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/46791
dc.description193 p.en_US
dc.description.abstractThe focus of this dissertation is the investigation of MOS transistors with very small dimensions in terms of very short gate length (Lg), very narrow gate width (Wg) as well as very small source-drain diffusion length (Lov). The candidate observed a relatively new phenomenon of narrow width effect, which was called the anomalous narrow width effect (ANWE). For example, the threshold voltage (VT) increased with the decrease of Wg for big Wg (~ 0.6 to 1.2 µm) but VT decreased with the decrease of Wg for small Wg (< 0.6 µm); this was only observed in "very short" (e.g. 0.13 µm) NMOS transistors having a phosphorus deep source-drain implant in addition to the usual arsenic implant. ANWE is a relatively weak effect for NMOS transistors but it is a strong effect in PMOS transistors with very short Lg.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleEffects of small gate length, gate width and s/d overhang on mosfets isolated by STI technologyen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorLau Wai Shingen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US
dc.identifier.doihttps://doi.org/10.32657/10356/46791


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