InSbN based photodiodes for Fong wavelength infrared photodetection
Date of Issue2009
School of Electrical and Electronic Engineering
InSbN alloys arc a potential candidate for the long wavelength infrared detection. By adding only small amount of nitrogen to the binary InSb, the bandgap can be significantly reduced due to the band anticrossing effect. In this research, a thin layer of InSbi_xNx was fabricated by multiple-step nitrogen ion implantations into the InSb substrate materials. Secondary Ion Mass Spectroscopy (SIiMS) was used to characterize the diffusion behavior of nitrogen atoms in the InSbN alloys. A migration of nitrogen towards the surface was observed which did not follow the Fick's second law.
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Nanyang Technological University