dc.contributor.authorWang, Yanen_US
dc.date.accessioned2011-12-23T09:58:55Z
dc.date.accessioned2017-07-23T08:33:44Z
dc.date.available2011-12-23T09:58:55Z
dc.date.available2017-07-23T08:33:44Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.citationWang, Y. (2009). InSbN based photodiodes for Fong wavelength infrared photodetection. Master’s thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/46827
dc.description109 p.en_US
dc.description.abstractInSbN alloys arc a potential candidate for the long wavelength infrared detection. By adding only small amount of nitrogen to the binary InSb, the bandgap can be significantly reduced due to the band anticrossing effect. In this research, a thin layer of InSbi_xNx was fabricated by multiple-step nitrogen ion implantations into the InSb substrate materials. Secondary Ion Mass Spectroscopy (SIiMS) was used to characterize the diffusion behavior of nitrogen atoms in the InSbN alloys. A migration of nitrogen towards the surface was observed which did not follow the Fick's second law.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titleInSbN based photodiodes for Fong wavelength infrared photodetectionen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorZhang Dao Huaen_US
dc.description.degreeMASTER OF ENGINEERING (EEE)en_US


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