Please use this identifier to cite or link to this item:
|Title:||Study of dislocations in lattice-mismatched semiconductors||Authors:||Yu, Ying.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2011||Source:||Yu, Y. (2011). Study of dislocations in lattice-mismatched semiconductors. Master’s thesis, Nanyang Technological University, Singapore.||Abstract:||Recently heteroepitaxy of III-V semiconductors with Si microelectronics on a single substrate has attracted great interest due to the ability of integrating optoelectronics on a silicon-based substrate. However, the fundamental differences in material, namely the 4% lattice mismatch and > 64% thermal expansion coefficient mismatch between GaAs and Si, epitaxial GaAs/Si integration are significantly maneuvered by the threading dislocations and the anti-phase defects (APDs).||Description:||79 p.||URI:||http://hdl.handle.net/10356/46845||Rights:||Nanyang Technological University||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.