Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/46845
Title: Study of dislocations in lattice-mismatched semiconductors
Authors: Yu, Ying.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2011
Source: Yu, Y. (2011). Study of dislocations in lattice-mismatched semiconductors. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: Recently heteroepitaxy of III-V semiconductors with Si microelectronics on a single substrate has attracted great interest due to the ability of integrating optoelectronics on a silicon-based substrate. However, the fundamental differences in material, namely the 4% lattice mismatch and > 64% thermal expansion coefficient mismatch between GaAs and Si, epitaxial GaAs/Si integration are significantly maneuvered by the threading dislocations and the anti-phase defects (APDs).
Description: 79 p.
URI: http://hdl.handle.net/10356/46845
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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