A study of dislocations in lattice-mismatched semiconductors
Date of Issue2011
School of Electrical and Electronic Engineering
Recently heteroepitaxy of III-V semiconductors with Si microelectronics on a single substrate has attracted great interest due to the ability of integrating optoelectronics on a silicon-based substrate. However, the fundamental differences in material, namely the 4% lattice mismatch and > 64% thermal expansion coefficient mismatch between GaAs and Si, epitaxial GaAs/Si integration are significantly maneuvered by the threading dislocations and the anti-phase defects (APDs).
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University