Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
Neo, Wah Peng
Date of Issue2006
School of Electrical and Electronic Engineering
In this work, high performance GaAs-based power HBT technology is developed. The devices fabricated on un-thinned GaAs substrate demonstrate a power density of 5 W/mm at 10 GHz. This is comparable to the state of the art of GaAs power HBTs using complicated substrate thinning and via whole processes.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Nanyang Technological University