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https://hdl.handle.net/10356/46912
Title: | Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications | Authors: | Neo, Wah Peng | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits | Issue Date: | 2006 | Source: | Neo, W. P. (2006). Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications. Doctoral thesis, Nanyang Technological University, Singapore. | Abstract: | In this work, high performance GaAs-based power HBT technology is developed. The devices fabricated on un-thinned GaAs substrate demonstrate a power density of 5 W/mm at 10 GHz. This is comparable to the state of the art of GaAs power HBTs using complicated substrate thinning and via whole processes. | Description: | 117 p. | URI: | https://hdl.handle.net/10356/46912 | DOI: | 10.32657/10356/46912 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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EEE_THESES_247.pdf | 11.75 MB | Adobe PDF | View/Open |
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