Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/46912
Title: Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
Authors: Neo, Wah Peng
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2006
Source: Neo, W. P. (2006). Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: In this work, high performance GaAs-based power HBT technology is developed. The devices fabricated on un-thinned GaAs substrate demonstrate a power density of 5 W/mm at 10 GHz. This is comparable to the state of the art of GaAs power HBTs using complicated substrate thinning and via whole processes.
Description: 117 p.
URI: https://hdl.handle.net/10356/46912
DOI: 10.32657/10356/46912
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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