Design and fabrication of micromachined RF switches and integrated switching circuits
Date of Issue2007
School of Electrical and Electronic Engineering
Positioning and Wireless Technology Centre
This thesis presents a new type of lateral switches and switching circuits for high frequency applications fabricated by a single-mask substrate transfer process. The lateral RF MEMS switch consists of silicon-core coplanar waveguide (CPW) transmission line and a cantilever-beam electrostatic actuator. The movable part is a highaspect-ratio silicon (Si) cantilever beam coated by metal. The electromagnetic modeling and design as well as mechanical modeling and design are depicted in detail. Both the RF response and the mechanical behaviour are verified by extensive experiments. The switch shows an insertion loss of below 1 dB at 50 MHz - 25 GHz. Both return loss and isolation are higher than 20 dB. The switching speed is 35 us. The life span is more than one million switching cycles.
DRNTU::Engineering::Electrical and electronic engineering
Nanyang Technological University