Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4695
Title: Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
Authors: Lim, Wai Tat.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2005
Abstract: The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive breakdown, the substantially high localized temperatures in the vicinity of the breakdown spot which can exceed silicon melting point will cause impurity dopants in the silicon to be redistributed.
URI: http://hdl.handle.net/10356/4695
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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