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https://hdl.handle.net/10356/4698| Title: | Wafer-level isothermal electromigration study on deep sub-micron interconnect metallization | Authors: | Lim, Yeow Kheng. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics | Issue Date: | 2002 | Abstract: | The main focus is to further develop the accelerated wafer-level ISO-J and IOS-T EM tests with the possibility of incorporation into wafer fabrication for rapid EM evaluation of new interconnect metallization. | URI: | http://hdl.handle.net/10356/4698 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_706.pdf Restricted Access | 16.95 MB | Adobe PDF | View/Open |
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