Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4698
Title: Wafer-level isothermal electromigration study on deep sub-micron interconnect metallization
Authors: Lim, Yeow Kheng.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2002
Abstract: The main focus is to further develop the accelerated wafer-level ISO-J and IOS-T EM tests with the possibility of incorporation into wafer fabrication for rapid EM evaluation of new interconnect metallization.
URI: http://hdl.handle.net/10356/4698
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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