Heteroepitaxial growth and characterization of lll-V compound semiconductor on silicon
Date of Issue2009
School of Electrical and Electronic Engineering
With the number of transistors in a Si IC chip passing the 2 billion mark, there are tremendous ongoing efforts to connect all these devices and make them function. Nonetheless, the RC time delay and power loss in the current copper interconnects have become a major impediment to improving IC performance. On the other hand, optical interconnect offers much higher speed and much larger bandwidth over copper interconnects and could potentially revolutionize the IC performance if successfully implemented. However, realization of optical interconnect's key component, the lightemitter, on a Si substrate is difficult as Si is an indirect bandgap material that does not efficiently generate photons. On the other hand, high-performance InAs quantum dot (QD) light-emitters are routinely demonstrated on GaAs substrates. This thesis presents systematic studies on monolithic heteroepitaxial integration of III-V compound semiconductor QD-based light-emitters on a Si substrate employing a graded Si1-xGex buffer layer.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University