dc.contributor.authorHendrix Tanotoen_US
dc.date.accessioned2011-12-27T05:54:21Z
dc.date.accessioned2017-07-23T08:34:04Z
dc.date.available2011-12-27T05:54:21Z
dc.date.available2017-07-23T08:34:04Z
dc.date.copyright2009
dc.date.issued2009
dc.identifier.citationHendrix T. (2009). Heteroepitaxial growth and characterization of lll-V compound semiconductor on silicon. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/47010
dc.description160 p.en_US
dc.description.abstractWith the number of transistors in a Si IC chip passing the 2 billion mark, there are tremendous ongoing efforts to connect all these devices and make them function. Nonetheless, the RC time delay and power loss in the current copper interconnects have become a major impediment to improving IC performance. On the other hand, optical interconnect offers much higher speed and much larger bandwidth over copper interconnects and could potentially revolutionize the IC performance if successfully implemented. However, realization of optical interconnect's key component, the lightemitter, on a Si substrate is difficult as Si is an indirect bandgap material that does not efficiently generate photons. On the other hand, high-performance InAs quantum dot (QD) light-emitters are routinely demonstrated on GaAs substrates. This thesis presents systematic studies on monolithic heteroepitaxial integration of III-V compound semiconductor QD-based light-emitters on a Si substrate employing a graded Si1-xGex buffer layer.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleHeteroepitaxial growth and characterization of lll-V compound semiconductor on siliconen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorYoon Soon Fatten_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US
dc.identifier.doihttps://doi.org/10.32657/10356/47010


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