Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/47020
Title: Temperature dependence of DC and RF characteristics in RF MOSFETs
Authors: Jiang, Shangbin
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2010
Abstract: The dissertation studied temperature dependence of DC and RF characteristics in 0.18um MOSFETs. For DC characteristics, studies on temperature dependences of drain source current l^s, transconductance Gm and threshold voltage Vth were carried out. The effect of temperature variation on RF parameters, such as cutoff frequency ft, maximum oscillation frequency fmax, minimum noise figure NFmin, noise resistance Rn, associated gain and Gamma Opt, were systematically studied in the temperature range of 300K to 400K.
Description: 94 p.
URI: http://hdl.handle.net/10356/47020
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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