dc.contributor.authorLi, Dao Shengen_US
dc.date.accessioned2011-12-27T05:56:45Z
dc.date.accessioned2017-07-23T08:34:06Z
dc.date.available2011-12-27T05:56:45Z
dc.date.available2017-07-23T08:34:06Z
dc.date.copyright2009
dc.date.issued2009
dc.identifier.citationLi, D. S. (2009). Semiconductor quantum well photodetector for fibre optical communication application. Master’s thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/47037
dc.description75 p.en_US
dc.description.abstractThe theoretical and experimental investigations on n-type GaAs based and GaAsN based double barrier quantum wells infrared photodetectors (DB QWIPs) were systematically discussed in this thesis. Firstly, the introduction of this project, the fundamental of double barrier quantum well (DBQW), and simulation models including the 8-band and 10-band k • p methods, and the methodology of major characterization tools and fabrication procedure were presented or reviewed. The energy band structures of GaAs/AlAs/AlGaAs QWs with different well widths, and GaAsN/AlAs/AlGaAs QWs with different nitrogen contents were calculated and analyzed using 8-band and 10-band k-p models, respectively. The results showed good agreement with the experimental results. Finally, the characterization results of XRD, TEM and EDX, PL, PLE, FTIR, and photocurrent analysis on GaAs/AlAs/AlGaAs QWs and GaAsN/AlAs/AlGaAs QWs were discussed in detail. Particularly, with increasing well widths or increasing nitrogen content in well region, PL and PLE properties and darkcurrent levels of different samples were compared and analyzed. With nitrogen incorporation, an S-shaped shift of PL peak with increasing temperature was observed and its origin was discussed. For the first time, evident PLE spectra of GaAs/AlAs/AlGaAs QW structures were presented and the transitions related to PLE absorption edges were discussed. Through investigations, GaAs(N) based QWIPs exhibited some novel and promising properties, which deserve further investigation in future research.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titleSemiconductor quantum well photodetector for fibre optical communication applicationen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorFan Weijunen_US
dc.description.degreeMASTER OF ENGINEERING (EEE)en_US


Files in this item

FilesSizeFormatView
EEE_THESES_87.pdf9.808Mbapplication/pdfView/Open

This item appears in the following Collection(s)

Show simple item record