Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4704
Title: Measuring and characterizing sub-micron MOSFETs
Authors: Lin, Hong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 2000
Abstract: In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is proposed with an improvement in the strong inversion region. The proposed model is based on the principle of the conventional n-channel enhancement mode MOSFET by taking into consideration the various phenomena associated with the LDD structure for very short channel MOSFFET devices. The important short-channel device features: Drain-Induced-Barrier-Lowering (DIBL), Channel-Length Modulation (CLM), mobility degradation, velocity saturation, the source/drain parasitic resistance etc. have been considered in the proposed model.
URI: http://hdl.handle.net/10356/4704
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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