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Title: | Measuring and characterizing sub-micron MOSFETs | Authors: | Lin, Hong. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits | Issue Date: | 2000 | Abstract: | In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is proposed with an improvement in the strong inversion region. The proposed model is based on the principle of the conventional n-channel enhancement mode MOSFET by taking into consideration the various phenomena associated with the LDD structure for very short channel MOSFFET devices. The important short-channel device features: Drain-Induced-Barrier-Lowering (DIBL), Channel-Length Modulation (CLM), mobility degradation, velocity saturation, the source/drain parasitic resistance etc. have been considered in the proposed model. | URI: | http://hdl.handle.net/10356/4704 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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EEE-THESES_711.pdf Restricted Access | 13.59 MB | Adobe PDF | View/Open |
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