Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
Date of Issue2010
School of Materials Science and Engineering
The aim of this project is to investigate the suitability of rare-earth oxide as gate dielectric, in particular LU2O3. There are three main chapters, in which the properties of LU2O3 film, the effect of post-deposition treatments on LU2O3 film as well as the properties of Lu203 on the next generation of semiconductor substrate are discussed in detail.
Nanyang Technological University