Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/47288
Title: Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
Authors: Peter Darmawan.
Keywords: DRNTU::Engineering
Issue Date: 2010
Source: Peter Darmawan. (2010). Lutetium oxide gate dielectric fabricated by pulsed laser deposition. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The aim of this project is to investigate the suitability of rare-earth oxide as gate dielectric, in particular LU2O3. There are three main chapters, in which the properties of LU2O3 film, the effect of post-deposition treatments on LU2O3 film as well as the properties of Lu203 on the next generation of semiconductor substrate are discussed in detail.
Description: 152 p.
URI: https://hdl.handle.net/10356/47288
DOI: 10.32657/10356/47288
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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