dc.contributor.authorPeter Darmawan.en_US
dc.date.accessioned2011-12-27T06:54:02Z
dc.date.accessioned2017-07-23T08:37:17Z
dc.date.available2011-12-27T06:54:02Z
dc.date.available2017-07-23T08:37:17Z
dc.date.copyright2010en_US
dc.date.issued2010
dc.identifier.citationPeter Darmawan. (2010). Lutetium oxide gate dielectric fabricated by pulsed laser deposition. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/47288
dc.description152 p.en_US
dc.description.abstractThe aim of this project is to investigate the suitability of rare-earth oxide as gate dielectric, in particular LU2O3. There are three main chapters, in which the properties of LU2O3 film, the effect of post-deposition treatments on LU2O3 film as well as the properties of Lu203 on the next generation of semiconductor substrate are discussed in detail.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineeringen_US
dc.titleLutetium oxide gate dielectric fabricated by pulsed laser deposition.en_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.supervisorLee Pooi Seeen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (MSE)en_US


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