Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/47500
Title: Field-effect transistors based on carbon nanotube networks
Authors: Lee, Chun Wei
Keywords: DRNTU::Science::Physics
Issue Date: 2010
Source: Lee, C. W. (2010). Field-Effect Transistors Based on carbon nanotube networks. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Single-walled carbon nanotubes (SWNTs) can be described as a roll-up of graphene sheet into a hollow cylinder with diameters in a nanometer range and lengths varying from tens of nanometers to centimeters. Owing to its roll-up chirality, SWNTs exhibit either metallic or semiconducting behaviour. The ballistic electron transport in semiconducting SWNTs manifests superior field-effect behavior and its intrinsic carrier mobility of about 100,000 cm7V-s due to its nearly one-dimensional and defect-free electronic structure makes it one of most promising candidates for electronic applications. However, precise positioning and alignment of SWNTs, inconsistency of its electrical properties due to variations of its chirality and diameter in SWNTs assembly, and the integration of single-tube devices into a circuit as well as scalability of its fabrication process are remaining major technical hurdles for realizing its electronic applications.
Description: 183 p.
URI: https://hdl.handle.net/10356/47500
DOI: 10.32657/10356/47500
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Theses

Files in This Item:
File Description SizeFormat 
SPMS_THESES_10.pdf20.84 MBAdobe PDFThumbnail
View/Open

Page view(s) 50

339
Updated on Dec 5, 2020

Download(s) 50

120
Updated on Dec 5, 2020

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.