Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/47596
Title: Characterization of narrow bandgap semiconductors
Authors: Ding, Xiao Ting
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2011
Abstract: This report is about characterization of the narrow bandgap semiconductor. The semiconductor used in the experiment is Indium antimonide (InSb). The behavior and properties of the InSb was focus in this report. The three samples InSb was grown by the Metal Organic Chemical Vapor Deposition with different temperatures. All the grown samples were undergoing of various characterization techniques to obtain its properties. There are various popular methods used to characterize the grown material such as Scanning Electron Microscopy (SEM) Photograph, Photoluminescence Spectroscopy (PL), Xray diffraction (XRD), and Hall Effect Measurement to allow us to understand more on the grown samples properties. With all this techniques, the defects can be detected easily. This also allows us to find the high quality samples grown among the three samples and determine the best temperature to growth the high quality sample.
URI: http://hdl.handle.net/10356/47596
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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