Please use this identifier to cite or link to this item:
Title: Physics of nitride-based high density quantum dot lasers
Authors: Yoon, Soon Fatt.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Issue Date: 2009
Abstract: The development of semiconductor lasers has been revolutionized by the use of quantum confinement made possible by the advanced epitaxial growth methods such as molecular beam epitaxy (MBE). Through this epitaxy method, low dimensional structures such as quantum well (QW) and quantum dot (QD) can be achieved. The use of low-dimensional QD active region for semiconductor laser over QW structures has been expected to improve many aspects of the laser performance such as, decreased transparency current density, higher characteristic temperature and output power, increased differential gain, suppressed carrier diffusion and larger tunability of wavelength emission through controlling the QD size and composition.
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

Files in This Item:
File Description SizeFormat 
  Restricted Access
Research Report1.84 MBAdobe PDFView/Open

Page view(s) 50

Updated on Nov 24, 2020

Download(s) 50

Updated on Nov 24, 2020

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.