Please use this identifier to cite or link to this item:
Title: Ultraviolet zinc oxide laser diodes on Si substrate
Authors: Yu, Siu Fung.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2008
Abstract: The main objective of this project is to fabricate ultraviolet (UV) ZnO homojunction laser diodes on Si substrate by using our proposed laser FCVA technique. The objectives of this proposal are listed (in order of priority) below: •To modify the existing pulsed-laser deposition system to laser FCVA system for the fabrication of high-quality n- and p- type ZnO films. • To fabricate high carrier concentration (>1019 cm–3) and low resistivity (<10–3 Ωcm) p-type ZnO thin films by FCVA technique plus laser ablation using P-compound sources as the dopants, • To achieve high-efficiency n-ZnO:Al/p-ZnO:P/Si substrate light-emitting diodes (LEDs), and • To demonstrate UV lasing from the p-ZnO:P/i-ZnO-SiO2 nanocomposite/n-ZnO:Al junction diodes on Si substrate.
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

Files in This Item:
File Description SizeFormat 
  Restricted Access
Research Report409.07 kBAdobe PDFView/Open

Page view(s) 5

checked on Sep 29, 2020

Download(s) 5

checked on Sep 29, 2020

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.