Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4798
Title: Wafer level electromigration reliability study of deep submicron via for multilevel metallization
Authors: Loh, Wye Boon.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2000
Abstract: The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep submicron Al-based multilevel metallization using the Wafer-level EM Test. For comparison, the results of highly accelerated wafer level EM reliability tests on Al-via and W-plug used in Al-based multilevel metallization are reported here.
URI: http://hdl.handle.net/10356/4798
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
EEE-THESES_797.pdf
  Restricted Access
30.54 MBAdobe PDFView/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.