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|Title:||Wafer level electromigration reliability study of deep submicron via for multilevel metallization||Authors:||Loh, Wye Boon.||Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
|Issue Date:||2000||Abstract:||The focus of this study is to compare the electromigration reliability of W-plug and Al-via in deep submicron Al-based multilevel metallization using the Wafer-level EM Test. For comparison, the results of highly accelerated wafer level EM reliability tests on Al-via and W-plug used in Al-based multilevel metallization are reported here.||URI:||http://hdl.handle.net/10356/4798||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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