Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4799
Title: Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
Authors: Loke, Wan Khai.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2003
Abstract: The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.
URI: http://hdl.handle.net/10356/4799
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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