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https://hdl.handle.net/10356/4823| Title: | Electrical and optical characterization of GaInP based heterostructures | Authors: | Lui, Poh Yong. | Keywords: | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
Issue Date: | 2000 | Abstract: | This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included. | URI: | http://hdl.handle.net/10356/4823 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_819.pdf Restricted Access | 13.09 MB | Adobe PDF | View/Open |
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