Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4823
Title: Electrical and optical characterization of GaInP based heterostructures
Authors: Lui, Poh Yong.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2000
Abstract: This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included.
URI: http://hdl.handle.net/10356/4823
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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