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|Title:||Electrical and optical characterization of GaInP based heterostructures||Authors:||Lui, Poh Yong.||Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
|Issue Date:||2000||Abstract:||This thesis presents the solid source molecular beam epitaxy (SSMBE) growth of Gao.52Ino.48P epitaxial layers, Gao.52Ino.48P/Ino.2Gao.8As/GaAs p-HEMT structures, and Gao 52lno.48P/GaAs single quantum well (SQW) on GaAs (100) substrate using the valved phosphorus cracker cell and valved arsenic cracker cell at various growth conditions. A study on defect properties, interface quality, and optical characterizations of the Gao.52Ino.48P/GaAs material system is included.||URI:||http://hdl.handle.net/10356/4823||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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