Fabrication of graphene based field-effect transistor

Abstract

In the last few years, extensive research effort has been directed to graphene related area. Owing to its unique honeycomb structure and remarkable electrical properties, graphene is evident to be an ideal conducting channel material in not only field-effect transistors (FET), but also further applications such as electrical sensors. In this report, graphene is used as conducting channel in fabricating FET. Reduced graphene oxide, a desirable alternative to pristine graphene, is used in this report, and which is synthesized through aqueous-solution based chemical reduction of graphene oxide. The electrical properties are characterized for fabricated transistors; indicators such as the conductivity, field-effect mobility, and ON/OFF ratio are calculated. Thus the trustworthy FETs based on graphene channel are obtained and displaying considerable conductivity, and suitable for further fabrications for like electrochemical or biological sensing applications.