Please use this identifier to cite or link to this item:
Title: Compact modeling of gate-all-around silicon nanowire MOSFETs
Authors: Lin Shihuan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2012
Source: Lin S. (2012). Compact modeling of gate-all-around silicon nanowire mosfets. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: This thesis documents the compact model development for the silicon nanowire MOSFET. A surface-potential based scalable model is developed for silicon nanowire MOSFET. An accurate surface potential initial guess is derived for the iterative surface potential solution within a few iteration steps. An analytical single-piece expression of the surface potential solution is derived in all regions of operation. An intrinsic long channel transistor drain current model is developed as the core model without charge-sheet approximation. To extend the core model into short channel devices, many physical phenomena including mobility degradation, channel length modulation, velocity saturation, and drain induced barrier lowering are incorporated into the core model. Some threshold voltage definitions are discussed and a new threshold voltage expression is proposed for silicon nanowire MOSFETs. The threshold voltage roll-off, subthreshold slope degradation, and drain induced barrier lowing effects are modeled with an approximate solution of the 2D Poisson’s equation. A simple, accurate, and continuous charge and capacitance model is developed based on the single-piece drain current model. The terminal charges are calculated using Ward-Button partition and the capacitances are obtained by the derivative of the terminal charges with respect to terminal voltages. The channel thermal noise model is developed, in which the thermal noise is obtained by integrating the output conductance along the channel. A novel flicker noise model that includes both mobility fluctuation and carrier fluctuation is developed. An analytical single-piece drain current mismatch model is developed to model the random fluctuation in the device parameters.
DOI: 10.32657/10356/48643
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
TeG0503110B.pdf2.65 MBAdobe PDFThumbnail

Page view(s) 50

Updated on May 5, 2021

Download(s) 20

Updated on May 5, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.