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|Title:||Self-aligned dual damascene processing technique to improve copper interconnect performance||Authors:||Neo, Chin Chuan||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2004||Abstract:||Improving the process and reliability of copper via-line metallization using a proposed novel self-aligned dual damascene approach for the 0.13 urn technology generation. Collective process issues when implementing industrial primary DD approaches led to the invention of the DD approach.||URI:||http://hdl.handle.net/10356/4931||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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