Please use this identifier to cite or link to this item:
Title: Self-aligned dual damascene processing technique to improve copper interconnect performance
Authors: Neo, Chin Chuan
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2004
Abstract: Improving the process and reliability of copper via-line metallization using a proposed novel self-aligned dual damascene approach for the 0.13 urn technology generation. Collective process issues when implementing industrial primary DD approaches led to the invention of the DD approach.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
12.71 MBAdobe PDFView/Open

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.