Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4938
Title: High frequency, higher power conversion through PWM switching using the third generation IGBTs
Authors: Neo, Tiong Guan.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2000
Abstract: The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power conversion process is now predominant. It combines the benefits that are obtainable from both the bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). The superiority of using IGBT power device in converters is investigated in this project initially. This device's features are studied and modeled using a combination of MOSFET, BJT devices and 5 dependent controlled sources. The behavior and characteristics of the IGBT switches is thus established in the macro model.
URI: http://hdl.handle.net/10356/4938
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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