Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4954
Title: Power MOSFET yield improvement through the improvement and refinement of epitaxy process
Authors: Ng, Kin Meng.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2003
Abstract: The work involved in this project is yield improvement of Power MOSFET (PMOS) wafers manufactured in STMicroelectronics. The yield improvement was achieved through the improvement and refinement of Epitaxy process.
URI: http://hdl.handle.net/10356/4954
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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