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|Title:||Characterization of deep submicrometer devices for RF applications||Authors:||Ng, Tze Cheng.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2001||Abstract:||The objective of this project is to adaptively develop new high performance advanced SPICE compatible deep submicrometer MOSFETs models suitable for RFIC design, together with an efficient parameter extraction methodology. These models will incorporated the many effects induced by multi-finger MOS transistors and have the potential for resulting in the significant reduction in RFIC design cycle time and manufacturing costs.||URI:||http://hdl.handle.net/10356/4967||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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