Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/49691
Title: RTS noise characterization of GaN on silicon based HEMT
Authors: Xiong, Chenxi.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2012
Abstract: This project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends reflected in the statistics and explained them reasonably. In cases where the charges have a significant impact on transistor performance, the output signal can be substantial. Thus, it would be meaningful to investigate the nature of RTS for transistors in both time and frequency domain.
URI: http://hdl.handle.net/10356/49691
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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