Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/49691
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dc.contributor.authorXiong, Chenxi.
dc.date.accessioned2012-05-23T04:16:43Z
dc.date.available2012-05-23T04:16:43Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.urihttp://hdl.handle.net/10356/49691
dc.description.abstractThis project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends reflected in the statistics and explained them reasonably. In cases where the charges have a significant impact on transistor performance, the output signal can be substantial. Thus, it would be meaningful to investigate the nature of RTS for transistors in both time and frequency domain.en_US
dc.format.extent69 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleRTS noise characterization of GaN on silicon based HEMTen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorGoh Wang Lingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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