Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorXiong, Chenxi.
dc.description.abstractThis project aims to investigate the RTS noise for GaN on Silicon based HEMTs for various bias voltages, and characterize the RTS noise by employing a statistical approach. By measuring the RTS noise for GaN on Silicon based HEMT under different bias voltage, we would be able to recognize the trends reflected in the statistics and explained them reasonably. In cases where the charges have a significant impact on transistor performance, the output signal can be substantial. Thus, it would be meaningful to investigate the nature of RTS for transistors in both time and frequency domain.en_US
dc.format.extent69 p.en_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleRTS noise characterization of GaN on silicon based HEMTen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorGoh Wang Lingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
item.fulltextWith Fulltext-
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
Files in This Item:
File Description SizeFormat 
  Restricted Access
1.46 MBAdobe PDFView/Open

Page view(s) 50

Updated on Nov 28, 2020

Download(s) 20

Updated on Nov 28, 2020

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.