Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/49717
Title: Characterization of novel memory devices based on nanostructured materials
Authors: Win, Aye Sandar.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2012
Abstract: An Al-rich Al2O3 thin film was deposited on a p-tpye silicon substrate by radio frequency sputtering to form Al/Al-rich Al2O3/p-Si MIS diode. The current-voltage(C-V) characteristics of the diodes were determined by carrier injection from either the silicon substrate or the Al gate and by carrier transport along the tunneling paths formed by Al nanocrystals distributed in the oxide layer. The reverse I-V characteristics were greatly affected by the charge trapping in the oxide layer. However the charge trapping did not produce a large change in the forward I-V characteristic. The electrical characterization was performed on three samples with different annealing conditions and the memory effect was observed from measurement results analysis.
URI: http://hdl.handle.net/10356/49717
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
eA6016-111.pdf
  Restricted Access
951.45 kBAdobe PDFView/Open

Page view(s) 50

132
checked on Oct 19, 2020

Download(s) 50

9
checked on Oct 19, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.