Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4979
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dc.contributor.authorChai, Koh Chinen_US
dc.date.accessioned2008-09-17T10:02:37Z-
dc.date.available2008-09-17T10:02:37Z-
dc.date.copyright2005en_US
dc.date.issued2005-
dc.identifier.urihttp://hdl.handle.net/10356/4979-
dc.description.abstractThe objective of this project is to resolve defect density issues of the Novellus Photo Resist Strip to reduce wafer scrape and improve yield for Chartered Silicon Partners, Fab 6, CHRT. The engineers will be able to use the resolution of the findings and implement across all Novellus Photo Resist Strippers. This includes identifying root cause of the problem, current design limitations, area of improvement, feasibility of new designs and implementation of new design and control method of the new design.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic packaging-
dc.titleParticle reduction of novellus PEP3510 photo resist stripperen_US
dc.typeThesisen_US
dc.contributor.supervisorAhn Jaeshinen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Microelectronics)en_US
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item.grantfulltextrestricted-
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