Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/49815
Title: Thin film characterizations for resistive memory
Authors: Weng, Bao Bin.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2012
Abstract: Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this Final Year Project, very thin films with thickness in a range of 1 – 10 nm thick will be grown using the state-of-the-arts laser molecular beam epitaxy (laser-MBE) technology by research staff and graduate students, afterwhich characterize conduction/resistive behavior and other physical and electrical properties of such nano-thin films. The student will closely work with supervisor, research staff and graduate student.
URI: http://hdl.handle.net/10356/49815
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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