dc.contributor.authorChen, Yining
dc.date.accessioned2012-05-28T03:50:49Z
dc.date.accessioned2017-07-23T08:34:20Z
dc.date.available2012-05-28T03:50:49Z
dc.date.available2017-07-23T08:34:20Z
dc.date.copyright2011en_US
dc.date.issued2011
dc.identifier.citationChen, Y. (2011). Study of degradation mechanism of metal nanocrystal-based gate stacks. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/49981
dc.description.abstractThis thesis focuses on the degradation and reliability mechanism of the metal nanocrystal-based Al2O3/SiO2 gate stacks which is believed to be a promising candidate for next generation nonvolatile memory. A series of novel approaches were used to obtain in-depth knowledge of the gate stack in terms of charge retention, gate dielectric breakdown and post-breakdown recovery. We also discuss the phenomenon of the post-breakdown recovery on the metal nanocrystal-based gate stack and the possibility of such charge-trapping gate stack as a candidate for a resistive switching memory cell.en_US
dc.format.extent164 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen_US
dc.titleStudy of degradation mechanism of metal nanocrystal-based gate stacksen_US
dc.typeThesis
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorGoh Kuan Eng, Johnson
dc.contributor.supervisorPey Kin Leongen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US
dc.identifier.doihttps://doi.org/10.32657/10356/49981


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