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https://hdl.handle.net/10356/50164
Title: | Graphene field effect transistor photodetector fabrication and investigation | Authors: | Deng, Qinfei | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
Issue Date: | 2012 | Abstract: | Graphene is a two-dimensional sheet of carbon atoms in a hexagonal honeycomb lattice structure through sp2 bonding has attracted much attention. Since the recent discovery of graphene by mechanical exfoliation of high purity graphite in 2004, intensive research has been devoted to this unique material. It is considered to be used as a promising candidate of electronic material, due to its unique electronic properties given by its lattice structure. Ultrahigh electron mobility of up to 200,000cm2V-1s-1 has been reported. | URI: | http://hdl.handle.net/10356/50164 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Student Reports (FYP/IA/PA/PI) |
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E6145-111.pdf Restricted Access | Main article | 2.36 MB | Adobe PDF | View/Open |
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