Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/50164
Title: Graphene field effect transistor photodetector fabrication and investigation
Authors: Deng, Qinfei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2012
Abstract: Graphene is a two-dimensional sheet of carbon atoms in a hexagonal honeycomb lattice structure through sp2 bonding has attracted much attention. Since the recent discovery of graphene by mechanical exfoliation of high purity graphite in 2004, intensive research has been devoted to this unique material. It is considered to be used as a promising candidate of electronic material, due to its unique electronic properties given by its lattice structure. Ultrahigh electron mobility of up to 200,000cm2V-1s-1 has been reported.
URI: http://hdl.handle.net/10356/50164
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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