Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5028
Title: Fourier transform Raman spectroscopy techniques for engineering and functional polymers in microelectronics industry
Authors: Hu, Xiao.
Keywords: DRNTU::Engineering::Materials::Material testing and characterization
Issue Date: 2001
Abstract: The project aims to establish research infrastructure, i.e., facilities Fourier Transform Infrered Laser Raman (FT-IR-Raman) spectroscopy system. FT-Raman is a powerful technique for characterisation of a wide range of materials particularly engineering and functional polymers in various of shapes and forms. This technique is particularly important in studying materials with symmetric chemical bonding. FT-Raman is a unique technique which uses an infrared laser of wavelength 1064 nm (Nd:Yag laser) instead of visible or UV lasers used in conventional Raman systems. The main objectives of the project are to develop the infrastructure equipment (i.e., FT-Raman system) to support the research in structural and optical property characterisation of conjugated polymers for photonic and microelectronics applications; characterisation of novel stress sensitive polymers for sensor applications; characterisation of novel copolymers as resist for microlithography; and experimental micro- optical stress analysis of films and microelectronics device. Efforts have been focused on capability development of FTIR-Raman techniques for polymer characterisation in terms of hardware, software and other know-how; customising techniques for stress/deformation analysis, opto-mechanical behaviour, structural and chemical analysis using Raman spectrometer, and ultimated developing novel diacetylene-containing copolymers that have potential applications as optical strain sensors (using Raman scattering as the diagnostic signals) and novel resists for microlithography. Upon developing the capability, there was follow-up collaboration with Chartered Semiconductors Manufacturing Pte Ltd on characterisation of low-k dielectric materials and chemical amplified photo resists.
URI: http://hdl.handle.net/10356/5028
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Research Reports (Staff & Graduate Students)

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