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|Title:||Trasformation from amorphous carbon to graphene||Authors:||Liang, Chen||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2012||Abstract:||Graphene is now becoming more attractive because of its unique properties. Many methods have been proposed to produce it. In this report, a simple annealing method is used to produce the graphene. A thin Ni film is deposited on a Si substrate by the e-beam system. Amorphous carbon is then deposited on the Ni film by the Filtered Cathodic Vacuum Arc (FCVA) system. Then the sample will be annealed in the TCVD system. The characterization methods such like Raman was used to detect the appearance of graphene. Some parameters like the temperature and annealing time in this process are examined to explore their influences on the final results||URI:||http://hdl.handle.net/10356/50290||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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