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|Title:||Atomistic simulation of structure and mobility of dislocation in semiconductor||Authors:||Choo, Zhi Min.||Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2002||Abstract:||The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature.||URI:||http://hdl.handle.net/10356/5045||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Theses|
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