Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5045
Title: Atomistic simulation of structure and mobility of dislocation in semiconductor
Authors: Choo, Zhi Min.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2002
Abstract: The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature.
URI: http://hdl.handle.net/10356/5045
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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