The molecular beam epitaxy growth of InSbN compound and its characterization.
Lim, Kim Peng.
Date of Issue2012
School of Electrical and Electronic Engineering
In this thesis, indium antimonide nitride (InSb1-xNx) alloys were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source. This work provides an enhanced understanding of this potentially significant alloy by investigating the structural, electrical and optical properties of the InSb1-xNx alloys using different core characterization techniques.
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics