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https://hdl.handle.net/10356/50466| Title: | The molecular beam epitaxy growth of InSbN compound and its characterization | Authors: | Lim, Kim Peng | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics | Issue Date: | 2012 | Source: | Lim, K. P. (2012). The molecular beam epitaxy growth of InSbN compound and its characterization. Doctoral thesis, Nanyang Technological University, Singapore. | Abstract: | In this thesis, indium antimonide nitride (InSb1-xNx) alloys were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source. This work provides an enhanced understanding of this potentially significant alloy by investigating the structural, electrical and optical properties of the InSb1-xNx alloys using different core characterization techniques. | URI: | https://hdl.handle.net/10356/50466 | DOI: | 10.32657/10356/50466 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| The MBE growth of InSbN Compound and Its Characterization.pdf | PhD Thesis | 36.52 MB | Adobe PDF |  View/Open |
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