Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/50478
Title: Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
Authors: Lin, Kaixin.
Keywords: DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2012
Source: Lin,K.X. (2012). Gallium nitride based optoelectronic devices on silicon-on-insulator substrates.Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate.
URI: http://hdl.handle.net/10356/50478
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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