Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
Date of Issue2012
School of Materials Science and Engineering
The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate.
DRNTU::Engineering::Materials::Photonics and optoelectronics materials