Please use this identifier to cite or link to this item:
Title: Gallium nitride based optoelectronic devices on silicon-on-insulator substrates
Authors: Lin, Kaixin.
Keywords: DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2012
Source: Lin,K.X. (2012). Gallium nitride based optoelectronic devices on silicon-on-insulator substrates.Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

Files in This Item:
File Description SizeFormat 
Tmse0500181J.pdfFull Thesis11.12 MBAdobe PDFThumbnail

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.