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|Title:||Gallium nitride based optoelectronic devices on silicon-on-insulator substrates||Authors:||Lin, Kaixin.||Keywords:||DRNTU::Engineering::Materials::Photonics and optoelectronics materials||Issue Date:||2012||Source:||Lin,K.X. (2012). Gallium nitride based optoelectronic devices on silicon-on-insulator substrates.Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||The III-Nitride material system finds applications in many optoelectronic and power electronic devices and is of utmost importance to address the performance gaps in current silicon and conventional III-V compound semiconductors. However, the performance of the III-Nitride devices on silicon substrate has been limited by the material quality due to the lack of an ideal substrate.||URI:||http://hdl.handle.net/10356/50478||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Theses|
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