Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5050
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dc.contributor.authorGoh, Hua Kooi.en_US
dc.date.accessioned2008-09-17T10:18:27Z-
dc.date.available2008-09-17T10:18:27Z-
dc.date.copyright2001en_US
dc.date.issued2001-
dc.identifier.urihttp://hdl.handle.net/10356/5050-
dc.description.abstractThis project investigated the process parameters, polishing consumables and pattern density dependencies in shallow trench isolation process performance.en_US
dc.format.extent149 p.-
dc.language.isoen-
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials-
dc.titleApplication of chemical mechanical polishing for sub-micron semiconductor device fabricationen_US
dc.typeThesisen_US
dc.contributor.supervisorHigelin, Geralden_US
dc.contributor.schoolSchool of Materials Science & Engineeringen_US
dc.description.degreeMaster of Applied Scienceen_US
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