Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5060
Title: Processing and characterization of low-k materials for ULSI application
Authors: Widodo, Johnny.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2004
Abstract: In this project, chemical vapor deposited carbon doped oxide films, with dielectric constants in the range of 2.7 to 3.5 were studied.
URI: http://hdl.handle.net/10356/5060
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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