Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5060
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dc.contributor.authorWidodo, Johnny.en_US
dc.date.accessioned2008-09-17T10:18:53Z-
dc.date.available2008-09-17T10:18:53Z-
dc.date.copyright2004en_US
dc.date.issued2004-
dc.identifier.urihttp://hdl.handle.net/10356/5060-
dc.description.abstractIn this project, chemical vapor deposited carbon doped oxide films, with dielectric constants in the range of 2.7 to 3.5 were studied.en_US
dc.format.extent108 p.-
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects-
dc.titleProcessing and characterization of low-k materials for ULSI applicationen_US
dc.typeThesisen_US
dc.contributor.supervisorMhaisalkar, Subodh Gautamen_US
dc.contributor.schoolSchool of Materials Science & Engineeringen_US
dc.description.degreeMaster of Engineering (SME)en_US
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