Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorWidodo, Johnny.en_US
dc.description.abstractIn this project, chemical vapor deposited carbon doped oxide films, with dielectric constants in the range of 2.7 to 3.5 were studied.en_US
dc.format.extent108 p.-
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects-
dc.titleProcessing and characterization of low-k materials for ULSI applicationen_US
dc.contributor.supervisorMhaisalkar, Subodh Gautamen_US
dc.contributor.schoolSchool of Materials Science & Engineeringen_US
dc.description.degreeMaster of Engineering (SME)en_US
item.fulltextWith Fulltext-
Appears in Collections:MSE Theses
Files in This Item:
File Description SizeFormat 
  Restricted Access
1.67 MBAdobe PDFView/Open

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.