Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5062
Title: Tantalum-based diffusion barriers for copper metallization
Authors: Khin Maung Latt.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2003
Abstract: The technological trend of shrinking integrated circuits in order to increase the logic density and improve the chip performance requires substituting copper for aluminium as interconnects in the deep sub-quarter micron ultra large scale integration (ULSI) devices. This trend is also reinforced by the fact that copper offers lower electrical resistivity.
URI: http://hdl.handle.net/10356/5062
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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