Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5063
Title: Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
Authors: Kim, Jae Hyung.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2002
Abstract: As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance.
URI: http://hdl.handle.net/10356/5063
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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