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https://hdl.handle.net/10356/5063
Title: | Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication | Authors: | Kim, Jae Hyung. | Keywords: | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects | Issue Date: | 2002 | Abstract: | As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance. | URI: | http://hdl.handle.net/10356/5063 | Schools: | School of Materials Science & Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | MSE Theses |
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MSE-THESES_28.pdf Restricted Access | 5.13 MB | Adobe PDF | View/Open |
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