Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/50712
Title: UV Raman studies of channel stress in transistors with embedded SiGe source and drain
Authors: Wong, Choun Pei
Keywords: DRNTU::Humanities::Philosophy
Issue Date: 2012
Source: Wong, C. P. (2012). UV Raman studies of channel stress in transistors with embedded SiGe source and drain. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Channel strain engineering is important for improving the performance of metal-oxide-semiconductor (MOS) devices today. UV Raman spectroscopy is commonly used for stress measurements in microelectronics applications, but its use in channel stress studies of advanced transistors in sub-100nm nodes is relatively unexplored. This thesis presents a low-cost method for rapid characterization of channel stress of 45nm-node transistors with embedded SiGe source and drain, using UV Raman spectroscopy. Results of using a micro-meter sized laser beam to study the channel stress of repeating transistors are presented and discussed. The effects of changing the gate pitch as well as the impact of implantation and annealing on the channel stress are investigated. Simulation results are also included to provide insight into the interaction of light with the structures studied. The measurement approach presented in this thesis can be an attractive alternative to other approaches that require more time and resources to carry out.
URI: https://hdl.handle.net/10356/50712
DOI: 10.32657/10356/50712
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Theses

Files in This Item:
File Description SizeFormat 
Tspms0602497H.pdf6.47 MBAdobe PDFThumbnail
View/Open

Page view(s) 20

465
Updated on May 9, 2021

Download(s) 10

355
Updated on May 9, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.