Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5072
Title: Chemical mechanical polishing process of copper metallization in the ULSI devices
Authors: Leow, Nelson Whatt Wei.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2004
Abstract: Explore techniques capable of reducing Cu dishing significantly. All techniques studied will focus on minimizing both topology and Cu interconnect sheet resistance. Factors affecting Cu removal and hence topology would also be investigated.
URI: http://hdl.handle.net/10356/5072
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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