dc.contributor.authorCao, Qi
dc.date.accessioned2012-10-16T04:30:20Z
dc.date.accessioned2017-07-23T08:34:35Z
dc.date.available2012-10-16T04:30:20Z
dc.date.available2017-07-23T08:34:35Z
dc.date.copyright2012en_US
dc.date.issued2012
dc.identifier.citationCao, Q. (2012). Characterization of quantum dot lasers with post-growth thermal annealing. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/50742
dc.description.abstractThe goal of this research work is to characterize and to suggest a method to improve the ten-layer InAs/InGaAs quantum dot (QD) laser performance by using post-growth thermal annealing. The approach of post-growth annealing is initially performed on the passive dots-in-a-well structure in this thesis. Interdiffusion of In and Ga atoms caused by thermal annealing has been proven from the photoluminescence measurements. The results show that p-doped QD structures are more resistant to intermixing. The post-growth thermal annealing technique is further applied to the active QD laser structure. Significant improvements in the performance of p-doped ten-layer InAs/InGaAs QD laser are demonstrated after annealing at 600 oC for 15 s. Defect reduction is thought to be the most likely mechanism contributing to the improved performance. The competition between the ground state (GS) and excited state (ES) lasing is investigated from the as-grown and thermally annealed QD lasers. Our results show that by adjusting the rapid thermal annealing temperature, the competition between the GS and ES lasing can be modified.en_US
dc.format.extent150 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleCharacterization of quantum dot lasers with post-growth thermal annealingen_US
dc.typeThesis
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorYoon Soon Fatten_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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